Si
SI2067
Silicium Plaquette
- Épaisseur:
- 0.625 mm
- Pureté:
- 99.999%
- La Description:
- PRIME GRADE. N-Type: P doped. Single crystal Orien. 1-0-0. Resistance 1-10 Ohm/cm.
Données techniques:
Silicon Wafer Diameter 125mm. Groth method CZ. PRIME Grade. Orientation: <100>+/-0.9deg. N type doped with Phosphorous. Purity... Silicon Wafer Diameter 125mm. Groth method CZ. PRIME Grade. Orientation: <100>+/-0.9deg. N type doped with Phosphorous. Purity 99.999% (5N). Resistivity: 1-10 Ohm.cm. Thickness 0.625mm (±0.025mm). Primary Flat length: 42.5+/-2.5mm. Primary Flat Orientation: <110>+/-0.9deg. TTV: <10µm. RA: <5A. Bow/Warp: <40µm. Particle: <50@0.2µm. Surface Finish: Single Side Polished (mirror finish) one side etched.