Si
SI2065
Silizium Wafer
- Dicke:
- 0.625 mm
- Reinheit:
- 99.999%
- Beschreibung:
- PRIME GRADE. P-Type: B doped. Single crystal Orien. 1-0-0. Resistance 14-25 Ohm/cm.
Technische Daten:
POA = Price on application. Batch Gi4659 **PRIME GRADE** - P Type doped with Boron. Resistance 14 - 25 Ohm/cm. Thickness 0.60mm... POA = Price on application. Batch Gi4659 **PRIME GRADE** - P Type doped with Boron. Resistance 14 - 25 Ohm/cm. Thickness 0.60mm - 0.65mm. One side polished (mirror finish) one side etched, Flats: 1 major. Growth method CZ.