Si
SI2064
Silizium Wafer
- Dicke:
- 0.625 mm
- Reinheit:
- 99.999%
- Beschreibung:
- PRIME GRADE. N-Type: P doped. Single crystal Orien. 1-0-0. Resistance 1-5 Ohm/cm.
Technische Daten:
POA = Price on application. Batch Gi4658 *PRIME Grade* - N Type doped with Phosphorous. Resistance 1-5 Ohms/cm. Thickness 0.60mm... POA = Price on application. Batch Gi4658 *PRIME Grade* - N Type doped with Phosphorous. Resistance 1-5 Ohms/cm. Thickness 0.60mm - 0.65mm. One side polished (mirror finish) one side etched, Flats: 1 major. Growth method CZ.