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SI2067 Silicon Wafer

Thickness:
0.625 mm
Purity:
99.999%
Description:
PRIME GRADE. N-Type: P doped. Single crystal Orien. 1-0-0. Resistance 1-10 Ohm/cm.
Si
Diameter:
125 mm
Weight/pc:
17.8 g
1 pc
$506.00
SI206701
2 pc
$850.00
SI206702
5 pc
$1539.00
SI206703
10 pc
POA
SI206704
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20 pc
POA
SI206705
Contact Us

Silicon Wafer Diameter 125mm. Groth method CZ. PRIME Grade. Orientation: <100>+/-0.9deg. N type doped with Phosphorous. Purity 99.999% (5N). Resistivity: 1-10 Ohm.cm. Thickness 0.625mm (±0.025mm). Primary Flat length: 42.5+/-2.5mm. Primary Flat Orientation: <110>+/-0.9deg. TTV: <10µm. RA: <5A. Bow/Warp: <40µm. Particle: <50@0.2µm. Surface Finish: Single Side Polished (mirror finish) one side etched.

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